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• W2064221808 abstract "Isothermal annealing experiments with switched gate bias have been performed to determine the properties of the latent interface-trap buildup during postirradiation annealing of metal–oxide–semiconductor transistors. It has been found that a bias-independent process occurs until the start of the latent interface-trap buildup. During the buildup itself, oxide-trap charge is not permanently neutralized, but is temporarily compensated." @default.
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• W2064221808 date "2000-12-18" @default.
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• W2064221808 title "Properties of latent interface-trap buildup in irradiated metal–oxide–semiconductor transistors determined by switched bias isothermal annealing experiments" @default.
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• W2064221808 doi "https://doi.org/10.1063/1.1336159" @default.
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