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- W2064275720 abstract "Through band gap engineering, metamorphic GaInP/GaAsP/Si multi-junction solar cells are theoretically capable of achieving a substantial increase in efficiency, with a significant decrease in cost, compared to current state-of-the-art Ge-based multi-junction solar cells. While the refinement of the necessary metamorphic materials and development of the associated sub-cells are obvious areas of focus, such devices also require high-performance tunnel junctions to minimize both optical and electrical sub-cell interconnection losses. Here we discuss efforts toward the development of these important component devices, including metamorphic materials growth and analysis, leading to the successful demonstration of metamorphic GaAs <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>09</sub> P <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>01</sub> tunnel junctions with peak current densities exceeding 100 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> and zero-bias resistance-area products of 4.5×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> Ω·αη <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> , indicating high-quality devices capable for use in future high-concentration GaInP/GaAsP/Si multi-junction devices." @default.
- W2064275720 created "2016-06-24" @default.
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- W2064275720 date "2013-06-01" @default.
- W2064275720 modified "2023-09-27" @default.
- W2064275720 title "Metamorphic tunnel junctions for high efficiency III-V/IV multi-junction solar cell technology" @default.
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- W2064275720 doi "https://doi.org/10.1109/pvsc.2013.6744285" @default.
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