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• W2064287784 startingPage "L948" @default.
• W2064287784 abstract "A high-crystalline-quality thick m-plane Ga0.92In0.08N film has been realized by epitaxial lateral overgrowth (ELO). The photoluminescence intensity of thick ELO-GaInN is about 6 times stronger than that of conventional thick GaInN. We fabricated a light-emitting diode (LED) having a GaInN/GaN multiquantum wells (MQWs) active layer on an ELO-GaInN layer. Satellite peaks of (1010) in the 2θ/ω-scan X-ray diffraction profile from this LED can be clearly observed, suggesting that MQWs having a sharp interface are grown. This new LED exhibits blue-light emission with a peak wavelength of 450 nm." @default.
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• W2064287784 date "2007-10-05" @default.
• W2064287784 modified "2023-09-23" @default.
• W2064287784 title "Realization of High-Crystalline-Quality Thick m-Plane GaInN Film on 6H-SiC Substrate by Epitaxial Lateral Overgrowth" @default.
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• W2064287784 doi "https://doi.org/10.1143/jjap.46.l948" @default.
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