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- W2064308979 abstract "The natural convection in the melt during LEC growth of GaAs is studied numerically for a crucible radius of 0.1 m, melt heights 0.025 m and 0.05 m, and crystal radii 0.025 m and 0.05 m. When only the crucible side wall is heated, the flow is unicellular moving up the side wall, along the melt-encapsulant interface, downward beneath the crystal, and along the bottom toward the side wall. With heating at the top of the crucible, the side wall temperature can be lowered without freezing the melt near the melt-encapsulant interface. The flow is often multi-cellular when the bottom of the crucible is heated. An optimum heating at the top and bottom of the crucible can flatten the isotherms near the crystal-melt interface and improve the diameter control.On a etudie numeriquement la convection naturelle de la fusion durant la croissance LEC du GaAs pour un rayon de creuset de 0,1 m, des hauteurs de fusion de 0,025 et 0,05 m et des rayons de cristaux de 0,025 et 0,05 m. Lorsque seul le bord du creuset est chauffe, l'ecoulement est unicellulaire, se deplacant vers le haut de la paroi, le long de l'interface encapsulant-fondu, vers le fond sous le cristal, et le long du fond vers la paroi. Lorsque le rechauffement a lieu au sommet du creuset, la temperature de paroi peut ětre abaissee sans que l'on gele la fusion pres de l'interface encapsulant-fondu. L'ecoulement est souvent multi-cellulaire lorsque le fond du creuset est chauffe. Un rechauffement optimum au sommet et au fond du creuset peut aplatir les isothermes pres de l'interface cristal-fondu et ameliorer le controle des diametres." @default.
- W2064308979 created "2016-06-24" @default.
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- W2064308979 date "1990-04-01" @default.
- W2064308979 modified "2023-09-27" @default.
- W2064308979 title "Natural convection in liquid encapsulated czochralski growth of gallium arsenide" @default.
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- W2064308979 doi "https://doi.org/10.1002/cjce.5450680209" @default.
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