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• W2064409766 abstract "A new method is presented for the determination of the absolute dynamic relaxation energy RD from experimental Auger parameters, the static dielectric constant and the plasmon energy of the solids. The relaxation energies of the Si 1s and 2p core levels in Si, SiC, SiO2, Si3N4 and Na2SiF6 are investigated by comparing the experimental values with theoretical results from a semiempirical dielectric theory. Both the experimental and theoretical results are valid only for the least-bound Si 2p state. The calculated relaxation shifts ΔRDea(1s) and ΔRDea(2p) are in reasonable agreement with the experimental values, and describe the extraatomic polarization effect well also for a deep level." @default.
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• W2064409766 date "1983-01-01" @default.
• W2064409766 modified "2023-09-26" @default.
• W2064409766 title "A new method for determining relaxation energies by means of aes and xps and its application to silicon compounds" @default.
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• W2064409766 doi "https://doi.org/10.1016/0368-2048(83)80016-4" @default.
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