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- W2064447247 abstract "A novel sputtering method for the preparation of the hydrogenated amorphous alloys a-SiGe:H and a-SiC:H and for doping of a-Si:H with good lateral homogeneity is presented: target to intermediate target sputtering. The series of sputtering processes starts with a primary target containing lateral structures of different materials which become increasingly equilibrated and smoothed as they are sputtered to the intermediate target and to the substrate. For homogenous composition of the substrate a minimum spatial frequency and/or maximum spatial distance of structures at the primary target is derived. Amorphous semiconductors (a-SiGe:H, a-SiC:H and a-Si:H doped with boron, gallium, antimony or phosphorus) prepared by target to intermediate target sputtering were analysed with respect to the elecrical conductivity, the position of the Fermi level, the type of charge transport and the optical band gap. A change in the room temperature conductivity of a-Si:H from 10-10 Ω-1 cm-1 for undoped samples to 10-2 Ω-1 cm-1 for doped samples has been achieved; the incorporation of germanium or carbon shifts the optical band gap to 1.1 eV or 2.5 eV respectively. In principle the target to intermediate target sputtering technique is expected to be applicable for any type of compound material." @default.
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- W2064447247 date "1984-09-01" @default.
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- W2064447247 title "Target to intermediate target sputtering technique for the preparation of continuously composed alloys and for doping of amorphous silicon" @default.
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- W2064447247 doi "https://doi.org/10.1016/0040-6090(84)90162-7" @default.
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