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• W2064567065 endingPage "280" @default.
• W2064567065 startingPage "205" @default.
• W2064567065 abstract "Abstract Electromigration on semiconductor surfaces is a preferential mass transport towards either the cathode or the anode over a clean semiconductor substrate heated by a DC current. Since the first observation of this electrically driven movement for an In overlayer on Si(111) in 1982, a systematic investigation of electromigration has been made for a variety of elements on several semiconductor substrates with scanning Auger electron spectroscopy and UHV reflection high energy electron microscopy. As a result, it has been widely observed and has proved to be a novel type of mass transport entirely different from conventional electromigration, which manifests itself in the presence of an extremely high density of DC current in bulk and thin-film materials. The novel electromigration exhibits a mass flux of deposited material in a direction mostly contrary to the conventional one of the same material. Moreover, during the novel electromigration, a homogeneous overlayer with a characteristic coverage and structure grows up laterally in the preferential direction over a clean bare surface of semiconductor substrate. This also contrasts with the fact that damages such as hillocks, cracks and voids are formed in current-carrying media during the conventional electromigration. The scope of the present review article includes an introductory description of the novel electromigration and the conventional one with a comparison of them, a brief explanation of related mass transports and related aspects of the surface diffusion of hetero-adatoms on single crystals, the experimental method of electromigration on semiconductor surfaces, detailed data of the electromigration for In, Ag and Au on Si(111), and Ag on Ge(111) along with summarized data of other elements on Si(111), effects of surface steps on the lateral migration of adatoms, the driving force of the electromigration, and a computer simulation of the electromigrative growth of the overlayer based on the lattice gas model with three types of nearest-neighbor atomic interactions and the Schwoebel factor. The macroscopic behaviors observed by the experimental studies are qualitatively well explained in terms of the basic processes of adatoms introduced into the computer simulation." @default.
• W2064567065 created "2016-06-24" @default.
• W2064567065 creator A5022279574 @default.
• W2064567065 creator A5038158054 @default.
• W2064567065 date "1992-01-01" @default.
• W2064567065 modified "2023-09-24" @default.
• W2064567065 title "Electromigration on semiconductor surfaces" @default.
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• W2064567065 doi "https://doi.org/10.1016/0167-5729(92)90007-x" @default.
• W2064567065 hasPublicationYear "1992" @default.
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