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- W2064657684 abstract "Dislocation behavior in InxGa1−xAs/InP (100) (x=0.82) grown by low pressure chemical vapor deposition (LP-MOCVD) at temperature about 430 °C was analyzed thoroughly by [110] cross-section transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and high resolution transmission electron microscopy (HRTEM). The 2% lattice mismatch between InP (100) and InxGa1−xAs (x=0.82) results in various types of defects such as stacking faults as well as 60° and 90° threading dislocations. Very high density of threading dislocation (TD) was shown in the InxGa1−xAs (x=0.82) epilayer. The epilayer was incompletely strain relaxed by the formation and multiplication of MDs." @default.
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- W2064657684 date "2013-09-01" @default.
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- W2064657684 title "TEM dislocations characterization of InxGa1−xAs/InP (100) (x=0.82) on mismatched InP substrate" @default.
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- W2064657684 doi "https://doi.org/10.1016/j.matlet.2013.04.116" @default.
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