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- W2064698959 abstract "The tensors of differential and static mobilities of hot electrons in a magnetic field are calculated in the frame of a model assuming electron energy-dependent relaxation times. It is shown that an N-type curve for ν(E) (drift velocity versus electric field) should become of an S-type in a strong enough magnetic field if the Hall field is short-circuited due to the sample configuration. An S-type (in the absence of a magnetic field) curve for ν(E) may become N-type in similar conditions. These effects are due to the peculiarities of geometrical magnetoresistance (GMR) in high electric and magnetic fields. Numerical calculations are performed for Si, GaAs, InP and Ga0.3In0.7Sb. For GaAs at room temperature the critical value of a magnetic field which is necessary for the turnover of the curve for ν(E) is about 30 kOe. It is demonstrated that for a conventional Hall sample the differential Hall mobility in high magnetic and electric fields should be strongly frequency-dependent on frequencies about and higher than an inverse differential dielectric relaxation time. It may diverge at these frequencies if the differential mobility in the absence of a magnetic field is negative. It is shown how the measurements of GMR for hot electrons can be used to estimate the maximal value of the negative differential mobility." @default.
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- W2064698959 date "1977-05-01" @default.
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- W2064698959 title "Geometrical magnetoresistance and negative differential mobility in semiconductor devices" @default.
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- W2064698959 doi "https://doi.org/10.1016/0038-1101(77)90129-0" @default.
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