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- W2064703755 abstract "We fit some existing data on the electrical activation of Si ions coimplanted with either N, P, or As ions in semi-insulating GaAs substrates grown by the liquid encapsulated Czochralski method. For one data set the activation anneal was done with proximity capped samples in a flowing H2 ambient, and for the other data sets anneals were done with dielectric capped samples. We are able to obtain good fits to all data with simple choices for the depth profiles of implanted ions if we adopt the following assumptions: (1) With no group V coimplants, the Si donors formed during a dielectric cap anneal, possibly SiGaVAs, are 100% ionized, while some of those formed during a proximity cap anneal in H2, possibly SiGaHAs, are less than 100% ionized and also serve to eliminate some arsenic vacancies. (2) All Si-related acceptors appear as BGaSiAs defects. (3) The observed enhancement of Si activation with coimplanted P is due to a decreased concentration of BGaSiAs acceptors whose formation is inhibited by P. (4) Coimplanted N or As does not inhibit the formation of BGaSiAs acceptors but, like coimplanted P at high doses, forms deep acceptors." @default.
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- W2064703755 date "1988-08-15" @default.
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- W2064703755 title "Electrical activation of silicon coimplanted with nitrogen, phosphorus, or arsenic in semi-insulating GaAs substrates grown by the liquid encapsulated Czochralski method" @default.
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- W2064703755 doi "https://doi.org/10.1063/1.341739" @default.
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