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- W2064863693 abstract "An epilayer of wide-band gap Al x Ga 1-x N was grown on sapphire by metal organic chemical vapor deposition (MOCVD) method with a GaN buffer layer of thickness slightly greater than 1 μm. Average composition of Al in the AlGaN layer is determined by Rutherford backscattering spectroscopy (RBS). Simulation of the random spectra reveals that the AlGaN layer has a composition of Al 0.05 Ga 0.95 N and a thickness of 200 nm. Low ratio of channeling and random spectra yields suggests good crystalline quality of ternary AlGaN epilayer. Tetragonal distortion (e T ) caused by elastic strain in AlGaN is measured from channeling angular scans taken around an off-normal [Formula: see text] axis in the [Formula: see text] plane of the AlGaN layer. The resulting AlGaN is identified to be showing compressive strain at the interfacial layer and the magnitude of the stress reduces towards the near-surface layer. It can be expected from the results that a 550 nm thick, epitaxially grown, AlGaN layer on sapphire can be relaxed completely (e T = 0)." @default.
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- W2064863693 date "2012-05-14" @default.
- W2064863693 modified "2023-09-23" @default.
- W2064863693 title "DEPTH-DEPENDENT TETRAGONAL DISTORTION STUDY OF AlGaN EPILAYER THIN FILM USING RBS AND CHANNELING TECHNIQUE" @default.
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- W2064863693 doi "https://doi.org/10.1142/s0217984912500868" @default.
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