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• W2064927777 abstract "Abstract We used an in-situ Kelvin probe to study the boron doping of hydrogenated amorphous silicon (a-Si: H) and hydrogenated amorphous silicon carbide (a-SiC: H) films. Secondary-ion mass spectrometry measurements show that incorporation ratio [B]/[Si] is close to unity for both materials doped with either diborane or trimethylboron. In the case of diborane, Kelvin probe measurements indicate a higher doping efficiency in a-Si: H material than in a-SiC: H material. The variation in the contact potential of a-Si: H with the diborane concentration has been quantitatively studied and compared with the variation in the activation energy of the dark conductivity. From numerical calculations a 3 × 1012 cm−2 eV−1 surface density of states, compatible with the experimental results, was found. The change in the band bending and the shift of the bulk Fermi level of a-Si:H during the doping were then deduced." @default.
• W2064927777 created "2016-06-24" @default.
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• W2064927777 date "1997-12-01" @default.
• W2064927777 modified "2023-10-11" @default.
• W2064927777 title "Quantitative in-situ Kelvin probe study of boron doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide" @default.
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• W2064927777 doi "https://doi.org/10.1080/01418639708243140" @default.
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