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- W2065006973 abstract "The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaOx (0.5≤x≤1.5) is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs(100) and InGaAs(100) surfaces, a stable suboxide (Ga2O) bond is detected at the interface but does not appear to be detrimental to device characteristics. In contrast, the removal of the Ga 3+ oxidation state (Ga2O3) is shown to result in the reduction of frequency dispersion in capacitors and greatly improved performance in III-V based devices." @default.
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- W2065006973 date "2009-04-20" @default.
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- W2065006973 title "Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning" @default.
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