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- W2065100511 abstract "The electrical characteristics of lightly doped n-channel FinFETs with a TiN/HfO2 gate stack have been thoroughly studied by experiments and numerical device simulations in terms of the fin width and gate length. Analysis of the experimental transfer characteristics shows that the effective work function of the gate stack increases with decreasing fin width, which is attributed to a negative interface charge due to different stoichiometry of the top-gate and side-gate interfaces. Furthermore, valuable design insights into the performance of 60 and 30 nm gate length FinFETs are provided. The influence of the doping concentration and length of the source/drain extension on the device performance is extensively analyzed. Based on experimental and simulation data, the results provide optimal technological parameters of the extension under the spacer for improving the performance of the FinFET device." @default.
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- W2065100511 date "2009-11-03" @default.
- W2065100511 modified "2023-10-17" @default.
- W2065100511 title "Electrical characterization and design optimization of FinFETs with a TiN/HfO<sub>2</sub>gate stack" @default.
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- W2065100511 doi "https://doi.org/10.1088/0268-1242/24/12/125001" @default.
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