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- W2065172010 abstract "A novel high-speed optoelectronic gate, based on electric field screening and ultrafast electrical recovery, is proposed, and demonstrated in principle with ultrathin barrier quantum wells. High-speed optical gates (operating, for example, on a picosecond time scale) are highly desirable for ultrafast information processing, such as in time-domain multiplexed networks and telecommunications. Nonlinear optical gates can give the necessary speed, but often take too much energy or power, and are not conveniently integrable with silicon electronics for control or information read-out. Optoelectronic devices can be conveniently small and readily interfaced with electronics, but are often slowed down by the finite speeds of electrical connections. Here we propose a novel optoelectronic device that can run with low optical energies, can be integrated readily with electronic information processing, and avoids the usual speed limitations of electrical connections. We also show preliminary data from a first such device." @default.
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- W2065172010 date "1998-05-22" @default.
- W2065172010 modified "2023-09-23" @default.
- W2065172010 title "High-speed quantum-well optoelectronic gate based on diffusive conduction recovery" @default.
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- W2065172010 doi "https://doi.org/10.1117/12.308903" @default.
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