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- W2065200216 abstract "ASTRACT Utilizing a co-planar device design we have successfully designed, faricated, characterized, and optimized a high performance Ta2O5 thin film passive uffer layer on Si sustrates, which will allow the integration of Ba1 − x Sr x TiO3 (BST) films with large area affordale Si sustrates. This passive uffer layer thin film was faricated via the industry standard metalorganic solution deposition technique. The anneal optimized Ta2O5 ased thin film possessed an enhanced dielectric constant (ϵ r = 45.6), low dielectric loss (tan δ = 0.006), high film resistivity (ρ = 1012 Ω -cm at be = 1 MV/cm), excellent temperature staility (temperature coefficient of capacitance of 52 ppm/°C), and excellent ias staility of capacitance (∼ 1.41% at 1 MV/cm). Additionally, the permittivity and dissipation factor exhiited minimal dielectric dispersion with frequency. The dielectric passive uffer layer film was typified by a uniform dense microstructure with minimal defects, and a smooth, nano-scale fine grain, crack/pinhol..." @default.
- W2065200216 created "2016-06-24" @default.
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- W2065200216 date "2005-07-01" @default.
- W2065200216 modified "2023-10-03" @default.
- W2065200216 title "THIN FILM PROCESSING AND INTEGRATION METHODS TO ENALE AFFORDALE MOILE COMMUNICATIONS SYSTEMS" @default.
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- W2065200216 doi "https://doi.org/10.1080/10584580590965032" @default.
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