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- W2065333863 abstract "We developed a novel technique for high-rate growth of microcrystalline silicon films by plasma-enhanced chemical vapor deposition, designing a novel cathode with interconnected multi-holes, which leads to generate uniformly flat-distributed stable high-density-plasma spots near cathode-surface. Improvement of quality of high-rate grown films was discussed, and microcrystalline silicon films with a low defect density of 1.2×1016 cm−3 were obtained at a high rate of 7.7 nm/s, demonstrating the efficient gas dissociation and the effectiveness of the novel cathode. The spatial distribution of plasma at cathode-surface holes was analyzed using optical emission spectroscopy for further optimization of plasma conditions." @default.
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- W2065333863 date "2004-06-01" @default.
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- W2065333863 title "High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma" @default.
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- W2065333863 doi "https://doi.org/10.1016/j.tsf.2003.12.041" @default.
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