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- W2065432817 abstract "This study investigates the temperature dependence of the current-voltage (I-V) characteristics of n-MgxZn1-xO/p-GaN junction diodes. The n-MgxZn1-xO films were deposited on p-GaN using a radio-frequency (rf) magnetron sputtering system followed by annealing at 500, 600, 700, and 800^oC in nitrogen ambient for 60s, respectively. The n-MgxZn1-xO/p-GaN diode at a substrate temperature of 25^oC had the lowest leakage current in reverse bias. However, the leakage current of the diodes increased with an increase in annealing temperatures. The temperature sensitivity coefficients of the I-V characterizations were obtained at different substrate temperatures (25, 50, 75 100, and 125^oC) providing extracted values of 26.4, 27.2, 17.9, and 0.0mV/^oC in forward bias and 168.8, 143.4, 84.6, and 6.4mV/^oC in reverse bias, respectively. The n-MgxZn1-xO/p-GaN junction diode fabricated with MgxZn1-xO annealed at 800^oC demonstrated the lowest temperature dependence. Based on these findings, the n-MgxZn1-xO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs)." @default.
- W2065432817 created "2016-06-24" @default.
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- W2065432817 date "2011-06-01" @default.
- W2065432817 modified "2023-09-27" @default.
- W2065432817 title "Temperature dependent current–voltage characteristics of n-MgxZn1−xO/p-GaN junction diodes" @default.
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- W2065432817 doi "https://doi.org/10.1016/j.mee.2011.01.068" @default.
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