Matches in SemOpenAlex for { <https://semopenalex.org/work/W2065437040> ?p ?o ?g. }
- W2065437040 abstract "The structural, compositional, and electrical properties of epitaxial Ni4InGaAs2 (denoted as Ni-InGaAs) film formed by annealing sputtered Ni film on InGaAs were investigated. It was found that Ni-InGaAs adopts a NiAs (B8) structure with lattice parameters of a = 0.396 ± 0.002 nm and c = 0.516 ± 0.002 nm, and exhibits an epitaxial relationship with InGaAs, with orientations given by Ni-InGaAs[1¯10]//InGaAs[001] and Ni-InGaAs[110]//InGaAs[110]. The epitaxial Ni4InGaAs2 film has bulk electrical resistivity of ∼102 μΩ·cm, which increases as the film thickness scales below 10 nm. The results of this work would be useful for the development of contact metallization for high mobility InGaAs metal-oxide-semiconductor field-effect transistors." @default.
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- W2065437040 date "2012-12-03" @default.
- W2065437040 modified "2023-09-23" @default.
- W2065437040 title "Crystal structure and epitaxial relationship of Ni4InGaAs2 films formed on InGaAs by annealing" @default.
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- W2065437040 doi "https://doi.org/10.1116/1.4769266" @default.
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