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• W2065496473 abstract "CuPt-ordering and phase separation were directly investigated in In1-xGaxAsyP1-y with a low arsenic content grown by organometallic vapor phase epitaxy on GaAs substrates. CuPt-ordering and phase separation in samples grown at the substrate temperatures of 630 and 690 °C were characterized by transmission electron diffraction and transmission electron microscopy. Although the immiscibility of InGaAsP was enhanced at the lower substrate temperature, the sample grown at 630 °C showed less phase separation than the 690 °C-grown sample. The degree of CuPt-ordering was significantly enhanced in the sample grown at 630 °C. The results demonstrated that the CuPt-ordering originating from surface reconstruction of P(2×4) suppressed the phase separation even in the miscibility gap. The detailed characterization of the phase separation clearly revealed a vertical composition modulation (VCM) in InGaAsP for the first time. The mechanism of the VCM formation is discussed based on the modulated-strain field on the surface." @default.
• W2065496473 created "2016-06-24" @default.
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• W2065496473 date "2010-07-01" @default.
• W2065496473 modified "2023-09-26" @default.
• W2065496473 title "Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy" @default.
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• W2065496473 doi "https://doi.org/10.1016/j.jcrysgro.2010.03.038" @default.
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