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- W2065536249 abstract "First principles calculations of HfO2/GaAs interfaces indicate that the interface states originate from the charge mismatch between HfO2 and GaAs surfaces. We find that a model neutral interface (HfO2 and GaAs surfaces terminated with two O and one Ga atoms per surface unit cell) removes gap states due to the balance of the interface charge. F and H can neutralize the HfO2/GaAs interface resulting in useful band offsets, thus becoming possible candidates to passivate the interface states." @default.
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- W2065536249 date "2010-09-01" @default.
- W2065536249 modified "2023-10-16" @default.
- W2065536249 title "Origin of HfO2/GaAs interface states and interface passivation: A first principles study" @default.
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- W2065536249 doi "https://doi.org/10.1016/j.apsusc.2010.04.048" @default.
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