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- W2065647890 abstract "Experimental ellipsometry measurements and theoretical Monte Carlo simulations reveal that interdiffusion takes place during the growth of amorphous carbon layers on Si(100) substrates. Intermixing is shown to be a strain mediated mechanism resulting in partial relief of local stresses both in the amorphous layer, as well as in the substrate layers near the interface." @default.
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- W2065647890 date "1998-05-01" @default.
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- W2065647890 title "Stability and interdiffusion at the a-C/Si(100) interface" @default.
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- W2065647890 doi "https://doi.org/10.1016/s0022-3093(98)00291-9" @default.
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