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• W2065662814 abstract "Atomic layer deposition technique and subsequent rapid thermal annealing (RTA) were implemented to grow high-quality ZnO epilayers for the fabrication of n-ZnO/p-GaN heterojunction LEDs. The X-ray diffraction measurement reveals that the ZnO epilayer has high crystallinity with <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</i> axis orientation. Transmission electron microscopy images present that the ZnO layer is a single crystal, including only a few survivals of threading dislocations, which were generated in the GaN layer deposited by metal-organic chemical vapor deposition on the c-Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> substrate and most of which were eliminated at the n-ZnO/p-GaN interface. An interfacial layer 4-5 nm thick caused by the RTA treatment was observed between the n-ZnO and p-GaN layers. Room temperature UV electroluminescence (EL) at 391 nm from ZnO was achieved at a low injection current about 10 mA. It is concluded that the competition between the ELs from the n-ZnO and p-GaN (around 425 nm) may be ascribed to the ZnO/GaN interface states coupled with the differences between the n-ZnO and p-GaN in carrier concentration and light emission efficiency." @default.
• W2065662814 created "2016-06-24" @default.
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• W2065662814 date "2010-02-01" @default.
• W2065662814 modified "2023-10-16" @default.
• W2065662814 title "UV Electroluminescence and Structure of n-ZnO/p-GaN Heterojunction LEDs Grown by Atomic Layer Deposition" @default.
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• W2065662814 doi "https://doi.org/10.1109/jqe.2009.2025250" @default.
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