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- W2065669148 abstract "Abstract The annealing behaviour of helium implanted silicon is viewed m the context of the annealing behaviour of boron implanted silicon. A well known feature of boron implanted silicon is its reverse annealing behaviour apparently due to boron coming out of substitutional sites. The carrier concentration profile measured by the C-V technique in p silicon implanted with 400 keV He + to 5×10 12 cm −2 shows hole removal in the region of damage. Annealing gives rise to rapid recovery of hole removal and the formation of shallow acceptors between 300°C and 450°C. These shallow acceptors anneal out in the range 450°C to 650°C. These temperatures correspond to the low anneal temperature increase and subsequent decrease of acceptor type activity associated with boron implanted silicon. The fact that the nature of damage in the helium and boron implantation cases should be similar suggests that the effect common to both arises out of damage rather than chemical effects. Thus an additional mechanism to explain the low temperature annealing behaviour of boron implanted silicon is examined." @default.
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- W2065669148 title "The annealing of light ion implantation damage in silicon" @default.
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