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• W2065678896 abstract "The interfacial and electrical properties of sputtered HfTiON on sulfur-passivated GaAs with or without TaON as interfacial passivation layer (IPL) are investigated. Experimental results show that the GaAs metal-oxide-semiconductor capacitor with HfTiON/TaON stacked gate dielectric annealed at 600 °C exhibits low interface-state density (1.0 × 1012 cm−2 eV−1), small gate leakage current (7.3 × 10−5 A cm−2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.65 nm), and large equivalent dielectric constant (26.2). The involved mechanisms lie in the fact that the TaON IPL can effectively block the diffusions of Hf, Ti, and O towards GaAs surface and suppress the formation of interfacial As-As bonds, Ga-/As-oxides, thus unpinning the Femi level at the TaON/GaAs interface and improving the interface quality and electrical properties of the device." @default.
• W2065678896 created "2016-06-24" @default.
• W2065678896 creator A5017344729 @default.
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• W2065678896 date "2013-08-26" @default.
• W2065678896 modified "2023-09-30" @default.
• W2065678896 title "Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer" @default.
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• W2065678896 doi "https://doi.org/10.1063/1.4818000" @default.
• W2065678896 hasPublicationYear "2013" @default.
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