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- W2065685506 abstract "The application of natural linear polysaccharide to green resist polymers was demonstrated for electron beam (EB) and extreme-ultraviolet (EUV) lithography using organic-solvent-free water spin-coating and tetramethylammonium hydroxide (TMAH)-free water-developable techniques. The water spin-coating and water-developable processes in a green resist material were carried out on wafers because of the water solubility of natural polysaccharides for an environmentally friendly manufacturing process for next-generation electronic devices. The developed green resist material with a weight-average molecular weight of 83,000 and 70 mol % hydroxyl groups as a water-developable feature was found to have acceptable properties such as spin-coat ability on 200 mm wafers, prediction sensitivity to EUV at the wavelengths of 6.7 and 13.5 nm, a high contrast of the water dissolution rate before and after EB irradiation, pillar patterns of 100–400 nm with a high EB sensitivity of 10 µC/cm2, and etch selectivity with a silicon-based middle layer in CF4 plasma treatment." @default.
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- W2065685506 date "2014-10-30" @default.
- W2065685506 modified "2023-09-26" @default.
- W2065685506 title "Application of natural linear polysaccharide to green resist polymers for electron beam and extreme-ultraviolet lithography" @default.
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- W2065685506 doi "https://doi.org/10.7567/jjap.53.116505" @default.
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