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• W2065762127 abstract "Single, free-standing GaN nanowires grown by plasma-assisted molecular-beam epitaxy have been investigated with low temperature micro-photoluminescence. The quantitative analysis of the luminescence spectra of around 100 nanowires revealed that each nanowire exhibits its own individual spectrum. A significant fraction of nanowires exclusively emits at energies corresponding to either surface-donor-bound or free excitons, demonstrating that optical properties of individual nanowires are determined by a few impurity atoms alone. The number of impurities per nanowire and their location within the nanowires varies according to Poissonian statistics." @default.
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• W2065762127 date "2010-11-26" @default.
• W2065762127 modified "2023-10-16" @default.
• W2065762127 title "Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit" @default.
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• W2065762127 doi "https://doi.org/10.1007/s12274-010-0061-1" @default.
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