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- W2065765032 abstract "A novel crystal growth method suitable for III–V compounds is proposed. In this method, called the Liquid Encapsulated Kyropoulos method, the crystal is grown under the B2O3 encapsulant. Large diameters are possible; control of the diameter is no longer a problem and the decomposition on the peripheral part is suppressed. The main advantage is a decrease of thermal stresses and as a consequence a large decrease of the dislocation density. These growth conditions lead to a decrease of the deep centers concentration and consequently to unusual electrical properties of GaAs crystal." @default.
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- W2065765032 date "1982-07-01" @default.
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- W2065765032 title "A novel crystal growth method for GaAs: The liquid encapsulated kyropoulos method" @default.
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- W2065765032 doi "https://doi.org/10.1016/0022-0248(82)90295-0" @default.
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