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- W2065783410 endingPage "2790" @default.
- W2065783410 startingPage "2786" @default.
- W2065783410 abstract "A chemical-vapor-deposition method operated under atmospheric pressure is available for crystal growth showing morphological instabilities. A highly supersaturating condition that is favorable for the growth of elegant ZnO whiskers promotes the growth of In2O3 whiskers. The In2O3 whiskers grew perpendicularly to the single crystalline substrate of yttria stabilized zirconia (YSZ). The heteroepitaxial relationship between the whiskers and the YSZ substrate is determined as In2O3[100](001) ∥ YSZ[100](001). The full-width at half maximum value of the (400) reflection of the In2O3 whisker was also determined to be 0.23° on the rocking curve." @default.
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- W2065783410 date "2003-05-15" @default.
- W2065783410 modified "2023-09-23" @default.
- W2065783410 title "Heteroepitaxy of In<sub>2</sub>O<sub>3</sub>Whiskers Fabricated on Single Crystalline (001) Yittrium Stabilized Zirconia" @default.
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- W2065783410 doi "https://doi.org/10.1143/jjap.42.2786" @default.
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