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- W2065794702 abstract "The I-V characteristics of Al-Al2O3-Te samples exhibit polarised commutation. The assumption of the existence of two domains dividing the insulating layer is made, one of these thin domains being a thin highly resistive Al-O layer present at the interface Al-Al2O3. When a forward voltage Va is applied (Al being negative), the current is tunnel-limited. When the applied voltage Va increases, traps in the Al-O layer are ionised, leading to the growth of a space charge and high electronic injection through this layer. As a result the OFF-ON transition occurs. The ON-OFF transition occurs when electrons are trapped in the ionised layer more rapidly than they are generated." @default.
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- W2065794702 date "1983-07-14" @default.
- W2065794702 modified "2023-10-17" @default.
- W2065794702 title "Space charge effect on the I-V characteristics of Al-Al2O3-Te thin film samples" @default.
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- W2065794702 doi "https://doi.org/10.1088/0022-3727/16/7/021" @default.
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