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- W2065840720 abstract "Abstract Etching of the bottom resist layer in a tri-level resist (TLR) process has been investigated in a magnetically enhanced reactive ion etcher (MERIE). It was found that the addition of Ar to an O 2 plasma is effective for obtaining an anisotropic etch profile of the bottom resist layer. The side-wall etch profile was found to be more vertical with plasma-enhanced chemical vapor deposition (PECVD) oxide than with spin-on glass (SOG) employed as an intermediate layer. Under the optimized process conditions fine stripe patterns (0.35 and 0.4 μm line/ space) were able to be defined with high etch rates (> 5000 A min − ), anisotropic profiles and high selectivity of the intermediate layer relative to the bottom resist (> 1:50)." @default.
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- W2065840720 date "1993-09-01" @default.
- W2065840720 modified "2023-09-25" @default.
- W2065840720 title "Magnetically enhanced reactive ion etching of photoresist in O2/Ar mixtures during a tri-level resist process" @default.
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- W2065840720 doi "https://doi.org/10.1016/0254-0584(93)90188-r" @default.
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