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- W2065982076 abstract "Optical lithography is still the technology of choice for the production of integrated circuits. The continuous need to shrink device geometry was originally made possible by reducing the wavelength and increasing the numerical aperture of the projection steppers. For the past half decade, various resolution and process latitude enhancement techniques, such as phase shifting masks (PSM) and off-axis illumination techniques have received a lot of attention. Although very promising lithographic results have been demonstrated with each of those, their application in real device manufacturing with arbitrary mask layouts has been hampered for various reasons (PSM manufacturing, limited applicability...). World-wide attention is directed more and more towards attenuated (embedded) PSM and annular illumination in order to overcome the limitations. In this article, both attenuated PSM design and illumination have been optimized to provide global improvements on critical random logic gate and contact levels. The optimized results, predicted by simulations, are verified experimentally using top surface imaging processes on a 0.42 NA deep-ultraviolet stepper, focusing on quarter-micrometer design rules. For contact levels, the best results are obtained with highly coherent conventional illumination. Gate levels require the combination of attenuated PSM with annular illumination." @default.
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- W2065982076 date "1994-11-01" @default.
- W2065982076 modified "2023-10-18" @default.
- W2065982076 title "Extending the limits of optical lithography for arbitrary mask layouts using attenuated phase-shifting masks with optimized illumination" @default.
- W2065982076 doi "https://doi.org/10.1116/1.587442" @default.
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