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- W2065984744 abstract "This paper describes high-voltage CMOS separation by implanted oxygen (SIMOX) technology and its application to a BSH-LSI that provides the basic functions of battery feed, supervision, and hybrid for subscriber line interface cuircuits. This technology is characterized by the existence of an electric-field-shielding (EFS) layer formed between the buried SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> and the surface Si layer by oxygen implantation. The density of localized states at the Fermi level of the EFS layer has been estimated to be about 1 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>19</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> . eV <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> using the Cohen-Fritzsche-Ovshinsky model. The EFS layer reduces substrate voltage dependence of the threshold voltage and increases the drain-to-source breakdown voltage for MOSFET's. Specifically, the drain-to-source breakdown voltage has been raised to 180 V. The BSH-LSI, which is composed of high-voltage CMOS of more than 60 V and low-voltage CMOS of 15 V, has been successfully fabricated containing resistors and capacitors. Compared with a conventional bipolar BSH-LSI, the chip size and the dissipation power of the LSI have been reduced to approximately one-third and one-half, respectively." @default.
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- W2065984744 date "1986-01-01" @default.
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- W2065984744 title "High-voltage CMOS SIMOX technology and its application to a BSH-LSI" @default.
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- W2065984744 doi "https://doi.org/10.1109/t-ed.1986.22448" @default.
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