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- W2066007584 abstract "In this work, we have fabricated silicon nanocrystal (nc-Si) based Flash memories with two different tunnel-oxide thicknesses (3 and 7 nm). The nc-Si is synthesized with very-low energy ion implantation and subsequent thermal annealing. The endurance and retention characteristics of the memory devices are investigated. For the thick tunnel oxide (7 nm), a memory window of ∼0.5 V is achieved with the program/erase (P/E) operation at +12 V/–12 V for 1 ms; and for the thin tunnel oxide (3 nm), a memory window of ∼0.6 V can be obtained at +9 V/–9 V for 1 μs. For both oxide thicknesses, good endurance with a small threshold voltage drift after 105 P/E cycles is observed. For the thick and thin tunnel oxides, the device is expected to show ∼20% and ∼70% charge loss after 10 years, respectively. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2066007584 date "2006-05-01" @default.
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- W2066007584 title "A study of the influence of tunnel oxide thickness on the performance of flash memory based on ion-beam synthesized silicon nanocrystals" @default.
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- W2066007584 doi "https://doi.org/10.1002/pssa.200566103" @default.
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