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• W2066052083 abstract "The influence of thermal neutron irradiation and fast neutron irradiation on the electrical properties of AlGaN/GaN HEMTs is investigated. An increase in the drain current and a decrease in the access resistances are observed when devices are irradiated with a thermalized neutrons fluence of 4.3 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>10</sup> neutrons.cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> while no evolution is observed with the same fluence of fast neutrons. However, the same phenomenon is observed when the fast neutron fluence is higher (1.8 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> neutrons.cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> ). AlGaN/GaN heterojunctions are analyzed by gamma spectroscopy after thermalized or fast neutron irradiations to understand the physical mechanisms induced by irradiations. In fact, we have shown that the improvement of electrical properties of devices after thermal neutrons irradiation is linked to a Ga-Ge transmutation effect. Moreover, the evolution of the drain current and access resistance when the AlGaN/GaN heterojunctions are irradiated by fast neutrons can be induced by N vacancies creation and/or a change of the strain state of the layers and/or Ga-Ge transmutation effect." @default.
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• W2066052083 date "2012-10-01" @default.
• W2066052083 modified "2023-10-14" @default.
• W2066052083 title "Influence of Thermal and Fast Neutron Irradiation on dc Electrical Performances of AlGaN/GaN Transistors" @default.
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• W2066052083 doi "https://doi.org/10.1109/tns.2012.2209894" @default.
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