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• W2066074966 abstract "Channel hot-carrier (CHC) degradation in nMOS transistors is studied for different SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /HfSiON dielectric stacks and compared to SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> . We show that, independent of the gate dielectric, in short-channel transistors, the substrate current peak (used as a measure for the highest degradation) is at V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> = V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> , whereas for longer channels, the maximum peak is near V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> = V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> /2. We demonstrate that this shift in the most damaging CHC condition is not caused by the presence of the high- k layer but by short-channel effects. Furthermore, the CHC lifetime of short-channel transistors was evaluated at the most damaging condition V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> = V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> , revealing sufficient reliability and even larger operating voltages for the high-k stacks than for the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> reference." @default.
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• W2066074966 date "2009-09-01" @default.
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• W2066074966 title "Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks" @default.
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• W2066074966 doi "https://doi.org/10.1109/tdmr.2009.2024129" @default.
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