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- W2066118034 abstract "Silicon p–i–n diodes have attracted considerable attention for their use as many applications. In the light of reducing total power loss, the forward voltage Vf and the reverse recovery charge Qr of silicon p–i–n power diodes are controlled by using two approaches based on control of either carrier lifetime or carrier injection efficiency. In this study, we investigate the effect of the two approaches on the relationship between Vf and Qr for a Si p–i–n diode rated at 200 A/1200 V via theoretical analyses. The magnitude of Vf for a given Qr value depends on rate of current density decreasing dj/dt. In the case of large values of dj/dt, carrier injection control can lead to decrease in Vf and Qr to a greater extent. In contrast, at small values of dj/dt, carrier lifetime control can provide a greater decrease in Vf and Qr." @default.
- W2066118034 created "2016-06-24" @default.
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- W2066118034 date "2015-01-21" @default.
- W2066118034 modified "2023-09-23" @default.
- W2066118034 title "Theoretical analysis of forward voltage and reverse recovery charge of silicon p–i–n diodes" @default.
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- W2066118034 doi "https://doi.org/10.7567/jjap.54.04dp01" @default.
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