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- W2066152927 abstract "Reflection high energy electron diffraction (RHEED) intensity oscillations have been used to obtain the arsenic incorporation coefficient for the growth of GaAs on GaAs(110) by molecular beam epitaxy (MBE) using either As2 or As4 as the source of arsenic. In both cases, the incorporation coefficients decrease with increasing growth temperature, with the values obtained for As2 being approximately twice those of As4. The results are modelled within a kinetic scheme based on the assumption that the incorporation processes are precursor mediated and in both cases involve a molecularly adsorbed As2 intermediate. The difference in the activation energies for the desorption and incorporation of the As2 intermediate is the same when using either As2 or As4. The implication is that the final incorporation step in the growth of GaAs(110) is independent of the arsenic species used." @default.
- W2066152927 created "2016-06-24" @default.
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- W2066152927 date "1997-02-01" @default.
- W2066152927 modified "2023-09-26" @default.
- W2066152927 title "Incorporation kinetics of As2 and As4 on GaAs(110)" @default.
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- W2066152927 doi "https://doi.org/10.1016/s0039-6028(96)01085-0" @default.
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