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• W2066153344 startingPage "L1172" @default.
• W2066153344 abstract "Nitrogen incorporation into oxide surfaces is required to prevent the penetration of boron from the polycrystalline silicon gate to the substrate in metal-oxide-semiconductor devices. We incorporate nitrogen only into the oxide surfaces by fluorination at room temperature and a subsequent atomic nitrogen treatment at temperatures below 550°C. Incorporated nitrogen atoms are found to be bound to silicon atoms and oxygen atoms by X-ray photoelectron spectroscopy. Moreover, surface roughness is improved by the nitridation process. The proposed technique is a unique process to obtain high-quality ultrathin dielectrics." @default.
• W2066153344 created "2016-06-24" @default.
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• W2066153344 date "1998-10-01" @default.
• W2066153344 modified "2023-09-25" @default.
• W2066153344 title "Nitridation of Silicon Oxide Surfaces by Fluorination and Subsequent Exposure to Atomic Nitrogen" @default.
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• W2066153344 doi "https://doi.org/10.1143/jjap.37.l1172" @default.
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