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- W2066319954 abstract "The hydrogen content (CH) and microstructure of a hydrogenated amorphous-silicon (a-Si:H) layer fabricated by plasma-enhanced chemical vapor deposition (PECVD) were analyzed to determine the effect of surface passivation on crystalline silicon (c-Si). The ratio of radio-frequency power to gas pressure (Cpp in W·Pa−1) of the PECVD system is defined as a characterization parameter. It was found that CH and the passivation of a-Si:H layers were sensitively affected by Cpp. However, CH remained almost constant at the same Cpp even though the PECVD power and pressure were widely varied. We determined that an optimal region exists in the range of 0.75 < Cpp < 1.25, where a high implied open-circuit voltage of 732 mV was obtained from a passivated a-Si:H/c-Si/a-Si:H structure, indicating that Cpp was a useful parameter for characterizing the surface passivation effect of a a-Si:H layer on c-Si." @default.
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- W2066319954 date "2015-03-18" @default.
- W2066319954 modified "2023-09-27" @default.
- W2066319954 title "Defining a parameter of plasma-enhanced CVD to characterize the effect of silicon-surface passivation in heterojunction solar cells" @default.
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- W2066319954 doi "https://doi.org/10.7567/jjap.54.041402" @default.
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