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• W2066328810 endingPage "6620" @default.
• W2066328810 startingPage "6620" @default.
• W2066328810 abstract "An n-type hydrogenated amorphous silicon ( n + -a-Si:H) field emitter array (FEA) was fabricated on a glass substrate and characterized. The n + -a-Si:H film was deposited by a conventional plasma-enhanced-chemical-vapor-deposition (PECVD) technique using a silane and phosphine mixed gas at a temperature lower than 350° C. The present film showed a low resistivity of 50 Ω· cm. The FEA consists of 1-µm-high emitter tips and a gate electrode with 1.8-µm-diameter openings. Using the fabricated FEA (25-tips), an emission current of 11 µ A was obtained at a gate voltage of 100 V." @default.
• W2066328810 created "2016-06-24" @default.
• W2066328810 creator A5038782732 @default.
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• W2066328810 date "1996-12-01" @default.
• W2066328810 modified "2023-09-23" @default.
• W2066328810 title "Fabrication of Field Emitter Arrays with Hydrogenated Amorphous Silicon on Glass" @default.
• W2066328810 cites W1972125082 @default.
• W2066328810 cites W2076627257 @default.
• W2066328810 cites W4247838306 @default.
• W2066328810 doi "https://doi.org/10.1143/jjap.35.6620" @default.
• W2066328810 hasPublicationYear "1996" @default.
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