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- W2066395874 abstract "The effect of substrate temperature (Ts) on the nucleation and growth of diamond on silicon nitride (Si3N4) based substrates deposited via the oxy-acetylene combustion flame technique was investigated. The diamond deposits were characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques. The nucleation density of the resulting deposits, which was of the order 105 nuclei/cm2, was used to approximate the activation energy for heterogeneous nucleation of diamond as32 – 40 kcal/mol. An Arrhenius plot of particle growth rate was used to calculate the activation energy for diamond growth as9.4 and 8.3 kcal/mol in the center and outside annulus of the deposit, respectively. These results suggest that the heterogeneous nucleation of diamond is a highly energetic process and may in fact be responsible for the observed low nucleation density of diamond on Si3N4. Thermodynamic analysis of gas/substrate reactions under conventional process conditions predicted that SiC formation, which is known to be a necessary precursor to diamond nucleation on Si, is energetically forbidden. Via kinetic and thermodynamic considerations, a patented in situ multistage deposition technique was developed which yielded continuous diamond coatings on Si3N4 substrates without extensive substrate preparation." @default.
- W2066395874 created "2016-06-24" @default.
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- W2066395874 date "1998-01-01" @default.
- W2066395874 modified "2023-10-01" @default.
- W2066395874 title "Nucleation and growth of combustion flame deposited diamond on silicon nitride" @default.
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- W2066395874 doi "https://doi.org/10.1016/s0263-4368(98)00055-9" @default.
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