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- W2066398410 abstract "Tantalum pentoxide (Ta 2 O 5 ) thin layers were grown on Si(100) by evaporation of Ta in an atomic oxygen plasma. The physical and electrical properties of 1000 A-thick as-deposited films were evaluated. Films grown at 650 °C without the presence of the plasma (molecular oxygen) were oxygen-deficient and poorly crystallized, whereas layers grown in the plasma (atomic oxygen) were stoichiometric (within 5%) and crystallized in the β-Ta 2 O 5 phase. A minimum flux of atomic oxygen during deposition, more than that required for growing films within 5% correct stoichiometry, was crucial for the suppression of the film leakage current. The electrical characterization of amorphous Ta 2 O 5 films grown at 400 °C resulted in I-V curves exhibiting an ohmic behaviour at low electric fields, <2 MV cm -1 (resistivity 10'4 Ω cm), and a leakage current density less than 10 -8 A cm -2 at 1 MV cm -1 . The measured relative dielectric constant of amorphous Ta 2 O 5 films was 26." @default.
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- W2066398410 date "1996-08-01" @default.
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- W2066398410 title "Tantalum oxide films on silicon grown by tantalum evaporation in atomic oxygen" @default.
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- W2066398410 doi "https://doi.org/10.1016/0040-6090(96)08667-1" @default.
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