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• W2066418250 abstract "Polycrystalline thin films of CuInSe2 and CuGaSe2 deposited by thermal evaporation onto heated substrates of 7059 glass and Al2O3 were studied by electrron microprobe analysis, X-ray diffractometry, Hall effect and van der Pauw measurements, and spectrophotometry in the near-infrared and visible range, 2000 - 400 nm. The resulting films covered a wide range of compositions, 19 – 29 at.%Cu ([Se]/[metal] ≅ 1.0). The substrate temperatures ranged from 350° to 500 °C. The films were subjected to post-deposition chemical treatments and anneals. The data for CuInSe2 indicates an absorption coefficient as high as 1.5 × 105 cm−1, though predominantly (2.0 – 8.0) × 104 cm−1, and band-gap values ranging from 0.94 to 1.02 eV, with band-gap narrowing observed for films deposited at 350 °C. The effect of high temperatures and lower copper concentrations in CuInSe2 and CuGaSe2 is to shift the onset of absorption to higher energies. The data for CuGaSe2 thin films indicate absorption coefficients up to (1 – 2) × 105 cm−1 at 500 nm and band gaps ranging from 1.66 to 1.72 eV. The effect of higher substrate temperatures on CuGaSe2 is to eliminate secondary phases and minimize residual absorption below the band gap. The electrical measurements on CuInSe2 indicate activated conductivity and show the films to be highly compensated by donors and acceptors whose origins are the native defects arising from non-stoichiometry. Slight copper-rich material is characterized as degenerate p-type with very low mobilities. For at.% Cu ⩽ 25, carrier concentrations and mobility change drastically with changes in stoichiometry." @default.
• W2066418250 created "2016-06-24" @default.
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• W2066418250 date "1988-05-01" @default.
• W2066418250 modified "2023-10-10" @default.
• W2066418250 title "Effects of composition and substrate temperature on the electro-optical properties of thin-film CuInSe2 and CuGaSe2" @default.
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• W2066418250 doi "https://doi.org/10.1016/0379-6787(88)90037-3" @default.
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