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- W2066484811 abstract "A phase change memory (PCM) utilizes resistivity changes accompanying fast transitions from an amorphous to a crystalline phase (SET) and vice versa (RESET). An investigation was made on the SET characteristics of PCM cells with Ge-doped SbTe (Ge‐ST) materials of two different Sb:Te ratios (4.53 and 2.08). For the material of higher Sb:Te (4.53), a SET operation was completed within several tens of nanoseconds via nucleation-free crystallization whereas the material of lower Sb:Te (2.08) rendered a slower SET operation requiring several hundred nanoseconds for a nucleation-mediated crystallization. From measurements of nucleation and growth kinetics via laser-induced crystallization, the observed SET characteristics of the former case were found to derive from a growth time about 10 3 times shorter than the nucleation time and those of the latter from a much shorter nucleation time as well as a longer growth time than in the former case. The measured nucleation kinetics of the lower Sb:Te (2.08) material is unexpected from the existing data, which has led us to advance an interesting finding that there occurs a trend-reversing change in the nucleation kinetics of the Ge-ST materials around the eutectic composition (Sb:Te ∼2.6); nucleation is accelerated with the increase in the Sb:Te ratio above Sb:Te of 2.6, but with a decrease in the Sb:Te ratio below it." @default.
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- W2066484811 date "2008-12-31" @default.
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- W2066484811 title "Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio" @default.
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