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- W2066564042 abstract "Summary Single crystal indium antimonide surfaces have been etched by two types of etchants: preferential etchants and a fast non-preferential etchant. The behaviour of the two facets have been examined and the formation of dislocation etch pits considered. Dislocation etch pits are developed on surface A (III) of the single crystal indium antimonide electrode while at surface B (III) etchants acting preferentially do not reveal dislocations. The rates of etching and the average corrosion current density for structures A and B are calculated. The etch patterns of the two facets of the single crystal are also given." @default.
- W2066564042 created "2016-06-24" @default.
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- W2066564042 date "1973-02-01" @default.
- W2066564042 modified "2023-09-27" @default.
- W2066564042 title "Etching behaviour at n-type indium antimonide electrodes" @default.
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- W2066564042 doi "https://doi.org/10.1016/s0022-0728(73)80079-8" @default.
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