Matches in SemOpenAlex for { <https://semopenalex.org/work/W2066573201> ?p ?o ?g. }
Showing items 1 to 74 of
74
with 100 items per page.
- W2066573201 abstract "Significant progress has been made in the technology for MBE growth of HgCdTe infrared focal-plane arrays on Si substrates since the initial demonstration of MBE HgCdTe-on- Si heteroepitaxy in 1989. In 1995, the first all-MBE-grown detector arrays on Si were produced through direct MBE growth of (112)B-oriented II-VI films on Si without III-V initiation layers, culminating in detector performance comparable to LPE-grown detectors on bulk CdZnTe substrates. This achievement was enabled by the development of two key contributing technologies: CdTe on Si buffer layer growth and HgCdTe p-on-n double-layer heterojunction growth using p-type chemical doping with As. The MBE process for deposition of high crystalline quality CdTe buffer layers has been developed so that x-ray rocking curve FWHM less than 75 arc-sec and near-surface etch pit densities (EPD) of 2 multiplied by 10<SUP>6</SUP> cm<SUP>-2</SUP> are routinely achievable for 9-micrometer-thick CdTe buffer layers. The dependence of CdTe EPD on ZnTe initiation layer thickness, insertion of CdTe/CdZnTe strained layer superlattices, and thermal cycling to cryogenic temperatures has been investigated and is reviewed. HgCdTe baselayers deposited by MBE on these CdTe/Si composite substrates exhibit x-ray FWHM as low as 72 arc-sec and EPD of 3 - 20 multiplied by 10<SUP>6</SUP> cm<SUP>-2</SUP>. To demonstrate the potential for MBE growth of large-area HgCdTe FPAs on Si, detectors with 78 K cutoff wavelength of 7.8 micrometer have been fabricated in this HgCdTe/Si epitaxial material with array-average R<SUB>0</SUB>A product of 1.64 multiplied by 10<SUP>4</SUP> (Omega) -cm<SUP>2</SUP> (0 FOV)." @default.
- W2066573201 created "2016-06-24" @default.
- W2066573201 creator A5018879456 @default.
- W2066573201 creator A5031715702 @default.
- W2066573201 creator A5035014199 @default.
- W2066573201 creator A5050479772 @default.
- W2066573201 creator A5057436523 @default.
- W2066573201 creator A5062116257 @default.
- W2066573201 creator A5062288438 @default.
- W2066573201 creator A5076943998 @default.
- W2066573201 date "1996-10-22" @default.
- W2066573201 modified "2023-09-27" @default.
- W2066573201 title "<title>MBE growth of HgCdTe IR detector structures on Si substrates: recent advances and future prospects</title>" @default.
- W2066573201 doi "https://doi.org/10.1117/12.255165" @default.
- W2066573201 hasPublicationYear "1996" @default.
- W2066573201 type Work @default.
- W2066573201 sameAs 2066573201 @default.
- W2066573201 citedByCount "3" @default.
- W2066573201 crossrefType "proceedings-article" @default.
- W2066573201 hasAuthorship W2066573201A5018879456 @default.
- W2066573201 hasAuthorship W2066573201A5031715702 @default.
- W2066573201 hasAuthorship W2066573201A5035014199 @default.
- W2066573201 hasAuthorship W2066573201A5050479772 @default.
- W2066573201 hasAuthorship W2066573201A5057436523 @default.
- W2066573201 hasAuthorship W2066573201A5062116257 @default.
- W2066573201 hasAuthorship W2066573201A5062288438 @default.
- W2066573201 hasAuthorship W2066573201A5076943998 @default.
- W2066573201 hasConcept C100460472 @default.
- W2066573201 hasConcept C105382558 @default.
- W2066573201 hasConcept C108649604 @default.
- W2066573201 hasConcept C110738630 @default.
- W2066573201 hasConcept C113196181 @default.
- W2066573201 hasConcept C171250308 @default.
- W2066573201 hasConcept C185592680 @default.
- W2066573201 hasConcept C192562407 @default.
- W2066573201 hasConcept C2779227376 @default.
- W2066573201 hasConcept C3792809 @default.
- W2066573201 hasConcept C43617362 @default.
- W2066573201 hasConcept C49040817 @default.
- W2066573201 hasConcept C6110044 @default.
- W2066573201 hasConcept C79794668 @default.
- W2066573201 hasConcept C81626474 @default.
- W2066573201 hasConceptScore W2066573201C100460472 @default.
- W2066573201 hasConceptScore W2066573201C105382558 @default.
- W2066573201 hasConceptScore W2066573201C108649604 @default.
- W2066573201 hasConceptScore W2066573201C110738630 @default.
- W2066573201 hasConceptScore W2066573201C113196181 @default.
- W2066573201 hasConceptScore W2066573201C171250308 @default.
- W2066573201 hasConceptScore W2066573201C185592680 @default.
- W2066573201 hasConceptScore W2066573201C192562407 @default.
- W2066573201 hasConceptScore W2066573201C2779227376 @default.
- W2066573201 hasConceptScore W2066573201C3792809 @default.
- W2066573201 hasConceptScore W2066573201C43617362 @default.
- W2066573201 hasConceptScore W2066573201C49040817 @default.
- W2066573201 hasConceptScore W2066573201C6110044 @default.
- W2066573201 hasConceptScore W2066573201C79794668 @default.
- W2066573201 hasConceptScore W2066573201C81626474 @default.
- W2066573201 hasLocation W20665732011 @default.
- W2066573201 hasOpenAccess W2066573201 @default.
- W2066573201 hasPrimaryLocation W20665732011 @default.
- W2066573201 hasRelatedWork W1610101988 @default.
- W2066573201 hasRelatedWork W1782767847 @default.
- W2066573201 hasRelatedWork W2000838427 @default.
- W2066573201 hasRelatedWork W2054273199 @default.
- W2066573201 hasRelatedWork W2066227964 @default.
- W2066573201 hasRelatedWork W2076434208 @default.
- W2066573201 hasRelatedWork W2081957203 @default.
- W2066573201 hasRelatedWork W2085890403 @default.
- W2066573201 hasRelatedWork W128641530 @default.
- W2066573201 hasRelatedWork W1964202400 @default.
- W2066573201 isParatext "false" @default.
- W2066573201 isRetracted "false" @default.
- W2066573201 magId "2066573201" @default.
- W2066573201 workType "article" @default.