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• W2066596836 abstract "Growth of ultrathin (&lt;100 Å) nitrided SiO2 on strained Si using microwave O2/N2O/NH3 plasma is reported. X-ray photoelectron spectroscopy results indicate a nitrogen-rich layer at the strained Si/SiO2 interface. The electrical properties of the nitrided oxides have been characterized using a metal–insulator–semiconductor structure. N2O plasma treatment of O2/NH3 nitrided SiO2 results in a lower insulator charge density (1.2×1011 cm−2) and a higher breakdown voltage." @default.
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• W2066596836 date "1998-09-14" @default.
• W2066596836 modified "2023-09-26" @default.
• W2066596836 title "Microwave plasma nitridation of silicon dioxide on strained Si" @default.
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• W2066596836 doi "https://doi.org/10.1063/1.122204" @default.
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