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- W2066766636 abstract "Silicon dioxide thin films have been grown at low temperatures from 25 to 390 ° C from Si3H8 and O2 gases by double-excitation photo-CVD using VUV light from a D2 lamp and UV light from a Hg lamp. Growth rate of the films grown at flow rate ratio Si3H8/O2=0.17 is ≌150 Å/min at 25 ° C and decreases as the substrate temperature increases. The refractive index has a maximum of 1.452 in the film deposited at 160 ° C and decreases for temperatures lower or higher than 160 ° C. The amount of Si-H and Si-OH, and the fixed-oxide-charge decrease as the temperature increases. The film deposited at 260 ° C shows a minimum interface state density of 3.6x1010 cm-2 eV-1 near the midgap." @default.
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- W2066766636 date "1988-09-01" @default.
- W2066766636 modified "2023-09-23" @default.
- W2066766636 title "SiO2 film growth by double-excitation photo-CVD using Si3H8 and O2" @default.
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- W2066766636 doi "https://doi.org/10.1016/0169-4332(88)90336-4" @default.
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