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- W2067042740 abstract "Scanning tunneling microscopy was used to investigate the development of the InAs wetting layer on the GaAs(001)-c(4×4) surface. At low InAs coverages signatures of indium agglomerations form on the surface, before an abrupt change to a (4×3) reconstructed monolayer of In2/3Ga1/3As occurs at about 2/3 ML of deposited InAs. Further indium deposition leads to a second layer with α2(2×4) and β2(2×4) structural units on the surface." @default.
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- W2067042740 date "2009-12-07" @default.
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- W2067042740 title "Evolution of the InAs wetting layer on GaAs(001)-c(4×4) on the atomic scale" @default.
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- W2067042740 doi "https://doi.org/10.1063/1.3266865" @default.
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